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| 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features * Low on-resistance R DS(on) = 0. 8 typ. (VGS = 4 V, I D = 100 mA) * 2.5V gate drive devices. * Small package (MPAK) Outline 2SK2570 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: 1. PW 10s, duty cycle 1 % Symbol VDSS VGSS ID I D(pulse)* Pch Tch Tstg 1 Ratings 20 10 0.2 0.4 150 150 -55 to +150 Unit V V A A mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Symbol V(BR)DSS V(BR)GSS I DSS I GSS Min 20 10 -- -- 0.5 -- Typ -- -- -- -- -- 0.8 Max -- -- 1.0 5.0 1.5 1.1 Unit V V A A V S Test Conditions I D = 10A, VGS = 0 I G = 100A, VDS = 0 VDS = 20 V, VGS = 0 VGS = 6.5V, VDS = 0 I D = 10A, VDS = 5V I D = 100 mA VGS = 4V * 1 -- 1.3 2.2 I D = 40 mA VGS = 2.5V * 1 Forward transfer admittance |yfs| Ciss Coss 0.22 0.35 -- I D = 100 mA VDS = 10V * 1 Input capacitance Output capacitance -- -- -- -- -- -- -- 45 33 9.6 20 60 240 140 -- -- -- -- -- -- -- pF pF pF ns ns ns ns VDS = 10V VGS = 0 f = 1MHz VGS = 5V, ID = 100 mA RL = 100 Gate to source cutoff voltage VGS(off) Static drain to source on state RDS(on) resistance Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time Fall time Notes: 1. Pulse test 2. Marking is "ZL-" t d(on) tr t d(off) tf 2 2SK2570 Main Characteristics 3 2SK2570 4 2SK2570 5 2SK2570 6 2SK2570 Package Dimensions Unit: mm 7 2SK2570 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 8 |
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